Avant Technology F641GU67F9333G 8GB vs Corsair CMW16GX4M2D3600C18 8GB

总分

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

差异规格评论

差异

Avant Technology F641GU67F9333G 8GB

需要考虑的原因
Avant Technology F641GU67F9333G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时

Corsair CMW16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2D3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.3 11.1

测试中的平均数值
更快的写入速度，GB/s

15.1 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F641GU67F9333G 8GB

Corsair CMW16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

11.1 18.3
写入速度，GB/s

6.5 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2113 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M393B5170FH0-CK0 4GB

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