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Avant Technology F6451U64F9333G 4GB
Corsair CMD32GX4M4C3200C14M 8GB

Avant Technology F6451U64F9333G 4GB vs Corsair CMD32GX4M4C3200C14M 8GB

总分
star star star star star
Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分
star star star star star
Corsair CMD32GX4M4C3200C14M 8GB

Corsair CMD32GX4M4C3200C14M 8GB

差异 规格 评论

差异

Avant Technology F6451U64F9333G 4GB 需要考虑的原因
Avant Technology F6451U64F9333G 4GB
报告一个错误
Corsair CMD32GX4M4C3200C14M 8GB 需要考虑的原因
Corsair CMD32GX4M4C3200C14M 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 27
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Avant Technology F6451U64F9333G 4GB
Corsair CMD32GX4M4C3200C14M 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 21
  • 读取速度，GB/s
    12.8 left arrow 16.6
  • 写入速度，GB/s
    6.7 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 3332

Avant Technology F6451U64F9333G 4GB RAM的比较

Samsung F6451U64F9333G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB

Corsair CMD32GX4M4C3200C14M 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX5M2B5600C36 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Heoriady M471A1K43BB1-CRC 16GB
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内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK32GX4M2A2400C14 16GB
Corsair CMK32GX4M2A2400C14 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
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Mushkin MR[ABC]4U320GJJM16G 16GB
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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S16GL32A8TS 16GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
AMD R748G2133U2S 8GB
AMD R748G2133U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Micron Technology 8ATF51264AZ-2G1A1 4GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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A-DATA Technology AM1P24HC4R1-BUNS 4GB
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