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Avant Technology F6451U64F9333G 4GB
Kingston KMKYF9-MID 8GB

Avant Technology F6451U64F9333G 4GB vs Kingston KMKYF9-MID 8GB

总分
star star star star star
Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分
star star star star star
Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

差异 规格 评论

差异

Avant Technology F6451U64F9333G 4GB 需要考虑的原因
Avant Technology F6451U64F9333G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 23% 更低的延时
Kingston KMKYF9-MID 8GB 需要考虑的原因
Kingston KMKYF9-MID 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Avant Technology F6451U64F9333G 4GB
Kingston KMKYF9-MID 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 35
  • 读取速度，GB/s
    12.8 left arrow 15.0
  • 写入速度，GB/s
    6.7 left arrow 11.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2627

Avant Technology F6451U64F9333G 4GB RAM的比较

Samsung F6451U64F9333G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB

Kingston KMKYF9-MID 8GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378T5663QZ3-CF7 2GB
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SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
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Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM