Avant Technology F6451U64F9333G 4GB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

21.9 12.8

测试中的平均数值
更快的写入速度，GB/s

22.2 6.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

12.8 21.9
写入速度，GB/s

6.7 22.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 4574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Crucial Technology BLS8G4D240FSA.16FAR 8GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-3600C16-16GTRGC 16GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3600C16-32GTZR 32GB

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Corsair CMX8GX3M2A1600C11 4GB

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G Skill Intl F4-2666C18-4GRS 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-2400C17-8GIS 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CM4X8GE2400C14K4 8GB