Avant Technology F6451U64F9333G 4GB vs Samsung M471A1K43CB1-CRCR 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

Samsung M471A1K43CB1-CRCR 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRCR 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

14.7 12.8

测试中的平均数值
更快的写入速度，GB/s

6.9 6.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Samsung M471A1K43CB1-CRCR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

12.8 14.7
写入速度，GB/s

6.7 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2231

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEAMGROUP-UD4-4000 4GB

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Kingston 9965525-018.A00LF 4GB

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SK Hynix HMA451R7MFR8N-TF 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

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Corsair CMW32GX4M4Z4000C18 8GB

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Samsung M393B5170FH0-CK0 4GB

Corsair CMD16GX4M4C3200C15 4GB

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Kingston 9905471-076.A00LF 8GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

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A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB