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Avant Technology F6451U64F9333G 4GB
V-GEN D4H4GL30A8TS5 4GB

Avant Technology F6451U64F9333G 4GB vs V-GEN D4H4GL30A8TS5 4GB

总分
star star star star star
Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分
star star star star star
V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

差异 规格 评论

差异

Avant Technology F6451U64F9333G 4GB 需要考虑的原因
Avant Technology F6451U64F9333G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 90
    左右 70% 更低的延时
V-GEN D4H4GL30A8TS5 4GB 需要考虑的原因
V-GEN D4H4GL30A8TS5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Avant Technology F6451U64F9333G 4GB
V-GEN D4H4GL30A8TS5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 90
  • 读取速度，GB/s
    12.8 left arrow 15.6
  • 写入速度，GB/s
    6.7 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 1743

Avant Technology F6451U64F9333G 4GB RAM的比较

Samsung F6451U64F9333G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB

V-GEN D4H4GL30A8TS5 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Infineon (Siemens) 64T32000HU3.7A 256MB
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内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
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内存RAM
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Kingston 9905403-011.A03LF 2GB
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Apacer Technology D12.2326WH.001 16GB
内存RAM
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Samsung M471B5273DH0-CH9 4GB
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Corsair CMG32GX4M2E3200C16 16GB
内存RAM