Corsair CM2X1024-6400 1GB vs G Skill Intl F4-4400C18-8GTZRC 8GB

总分

Corsair CM2X1024-6400 1GB

Corsair CM2X1024-6400 1GB

总分

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

差异规格评论

差异

Corsair CM2X1024-6400 1GB

需要考虑的原因
Corsair CM2X1024-6400 1GB

报告一个错误

更快的读取速度，GB/s

4 22.3

测试中的平均数值
更快的写入速度，GB/s

2,254.8 16.3

测试中的平均数值

G Skill Intl F4-4400C18-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-4400C18-8GTZRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 54

左右 -80% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400 1GB

G Skill Intl F4-4400C18-8GTZRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 30
读取速度，GB/s

4,715.6 22.3
写入速度，GB/s

2,254.8 16.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

857 3697

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

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Corsair CM2X1024-6400 1GB

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G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Kingston KHX1600C9S3L/8G 8GB

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Samsung M471A1K43BB0-CPB 8GB

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Samsung M471A1K43CB1-CTD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Mushkin MR[A/B]4U360JNNM8G 8GB

Mushkin MR[A/B]4U360JNNM8G 8GB

Corsair CM2X1024-6400 1GB

Corsair CM2X1024-6400 1GB

Kingston 9905678-110.A00G 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F4-3600C18-32GTZN 32GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB