Corsair CM2X1024-6400C4 1GB vs Crucial Technology CT16G4DFD8213.C16FBD 16GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.9

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 54

左右 -64% 更低的延时
更快的写入速度，GB/s

10.4 1,973.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 33
读取速度，GB/s

4,967.4 15.9
写入速度，GB/s

1,973.5 10.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

776 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM2X1024-6400C4 1GB

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Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

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Samsung M393A5143DB0-CRC 4GB