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Corsair CM2X1024-6400C4 1GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB

Corsair CM2X1024-6400C4 1GB vs Micron Technology 8ATF1G64HZ-2G1A1 8GB

总分
star star star star star
Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

差异 规格 评论

差异

Corsair CM2X1024-6400C4 1GB 需要考虑的原因
Corsair CM2X1024-6400C4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.2
    测试中的平均数值
Micron Technology 8ATF1G64HZ-2G1A1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G1A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 54
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    10.8 left arrow 1,973.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Corsair CM2X1024-6400C4 1GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 28
  • 读取速度，GB/s
    4,967.4 left arrow 14.2
  • 写入速度，GB/s
    1,973.5 left arrow 10.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    776 left arrow 2527

Corsair CM2X1024-6400C4 1GB RAM的比较

Kingston KHX6400D2LL/1GN 1GB
V-GEN D4H4GL26A8TS5 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
内存RAM
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 99U5702-025.A00G 8GB
Kingston 99U5702-025.A00G 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM