Corsair CM2X1024-8500C5D 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

总分

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

差异规格评论

差异

Corsair CM2X1024-8500C5D 1GB

需要考虑的原因
Corsair CM2X1024-8500C5D 1GB

报告一个错误

更快的读取速度，GB/s

4 10

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的写入速度，GB/s

8.5 2,034.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-8500C5D 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

4,295.1 10.0
写入速度，GB/s

2,034.7 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

650 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Mushkin 991586 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

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G Skill Intl F4-3600C15-8GTZ 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

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Kingston 9905678-065.A00G 8GB

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Essencore Limited IM4AGU88N24-FFFHMB 16GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB