Corsair CM2X1024-8500C5D 1GB vs Samsung M378A1G43DB0-CPB 8GB

总分

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

差异规格评论

差异

Corsair CM2X1024-8500C5D 1GB

需要考虑的原因
Corsair CM2X1024-8500C5D 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

2,034.7 10.3

测试中的平均数值

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 48

左右 -33% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-8500C5D 1GB

Samsung M378A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

48 36
读取速度，GB/s

4,295.1 15.0
写入速度，GB/s

2,034.7 10.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

650 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2B4133C19 4GB

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Corsair CM2X1024-8500C5D 1GB

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Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-2400C15-8GVS 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB