Corsair CM2X2048-6400C5 2GB vs Samsung M471A2K43DB1-CWE 16GB

总分

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

总分

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异规格评论

差异

Corsair CM2X2048-6400C5 2GB

需要考虑的原因
Corsair CM2X2048-6400C5 2GB

报告一个错误

更快的读取速度，GB/s

5 15.8

测试中的平均数值
更快的写入速度，GB/s

2,549.9 13.5

测试中的平均数值

Samsung M471A2K43DB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 53

左右 -43% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Corsair CM2X2048-6400C5 2GB

Samsung M471A2K43DB1-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 37
读取速度，GB/s

5,481.3 15.8
写入速度，GB/s

2,549.9 13.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1026 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-515.A00LF 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Apacer Technology D22.23263S.002 16GB

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Crucial Technology CT8G4SFRA32A.C16FG 8GB

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Samsung M378B5673EH1-CF8 2GB

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A-DATA Technology DDR2 800G 2GB

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Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

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Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905744-024.A00G 16GB

Kingston 9905744-024.A00G 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB