Corsair CM3X2G1600C9DHX 2GB vs V-Color Technology Inc. TN416G26D819-SB 16GB

总分

Corsair CM3X2G1600C9DHX 2GB

Corsair CM3X2G1600C9DHX 2GB

总分

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

差异规格评论

差异

Corsair CM3X2G1600C9DHX 2GB

需要考虑的原因
Corsair CM3X2G1600C9DHX 2GB

报告一个错误

V-Color Technology Inc. TN416G26D819-SB 16GB

需要考虑的原因
V-Color Technology Inc. TN416G26D819-SB 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 36

左右 -9% 更低的延时
更快的读取速度，GB/s

15 12.4

测试中的平均数值
更快的写入速度，GB/s

8.5 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Corsair CM3X2G1600C9DHX 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 33
读取速度，GB/s

12.4 15.0
写入速度，GB/s

7.6 8.5
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1583 2524

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Crucial Technology CB8GU2400.C8D 8GB

Crucial Technology CB8GU2400.C8D 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK32GX4M4C3000C16 8GB

Corsair CMK32GX4M4C3000C16 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-4266C19-32GTZR 32GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Samsung M471B5173BH0-CH9 4GB

Samsung M471B5173BH0-CH9 4GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB