Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Micron Technology AFLD48VH1P 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

Micron Technology AFLD48VH1P 8GB

需要考虑的原因
Micron Technology AFLD48VH1P 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

15.7 12.6

测试中的平均数值
更快的写入速度，GB/s

11.4 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Micron Technology AFLD48VH1P 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

12.6 15.7
写入速度，GB/s

7.2 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2051 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

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Kingston 99U5471-020.A00LF 4GB

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Corsair CMK32GX4M4K4266C19 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMK64GX4M4D3600C18 16GB

Corsair CMK64GX4M4D3600C18 16GB