Corsair CM3X8GA2400C11Y2R 8GB vs G Skill Intl F4-3200C15-8GTZKY 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 25

左右 20% 更低的延时

G Skill Intl F4-3200C15-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKY 8GB

报告一个错误

更快的读取速度，GB/s

19.4 19.1

测试中的平均数值
更快的写入速度，GB/s

15.5 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 25
读取速度，GB/s

19.1 19.4
写入速度，GB/s

13.1 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3252 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD48GU880-32A160T 8GB

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Corsair CMWX8GD3200C16W4 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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G Skill Intl F4-3200C15-8GTZKY 8GB

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Samsung M393B5170FH0-CK0 4GB

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Micron Technology 8ATF1G64AZ-3G2R1 8GB

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Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

Avant Technology J641GU42J9266NL 8GB

Avant Technology J641GU42J9266NL 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

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Samsung M391B5673EH1-CH9 2GB

Kingston HP26D4S9S8HJ-8 8GB

Kingston HP26D4S9S8HJ-8 8GB