Corsair CM3X8GA2400C11Y2R 8GB vs Kingston ACR26D4U9S8ME-8X 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Kingston ACR26D4U9S8ME-8X 8GB

Kingston ACR26D4U9S8ME-8X 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 30

左右 33% 更低的延时
更快的读取速度，GB/s

19.1 15.5

测试中的平均数值
更快的写入速度，GB/s

13.1 12.8

测试中的平均数值

Kingston ACR26D4U9S8ME-8X 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8X 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Kingston ACR26D4U9S8ME-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 30
读取速度，GB/s

19.1 15.5
写入速度，GB/s

13.1 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-013.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3600C16-16GTRSC 16GB

G Skill Intl F4-3600C16-16GTRSC 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Kingston 9965433-034.A00LF 4GB

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Kingston 9905630-030.A00G 16GB

Kingston 9905630-030.A00G 16GB