Corsair CM3X8GA2400C11Y2R 8GB vs Kingston KHX3200C16D4/16GX 16GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 29

左右 31% 更低的延时
更快的读取速度，GB/s

19.1 18.2

测试中的平均数值

Kingston KHX3200C16D4/16GX 16GB

需要考虑的原因
Kingston KHX3200C16D4/16GX 16GB

报告一个错误

更快的写入速度，GB/s

14.6 13.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Kingston KHX3200C16D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 29
读取速度，GB/s

19.1 18.2
写入速度，GB/s

13.1 14.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 3603

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-8GRS 8GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-3333C16-8GTZB 8GB

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Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-3300C16-8GTZSW 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB