Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Avexir Technologies Corporation T 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation T 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

Avexir Technologies Corporation T 4GB

需要考虑的原因
Avexir Technologies Corporation T 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 24

左右 -14% 更低的延时
更快的读取速度，GB/s

18 16

测试中的平均数值
更快的写入速度，GB/s

13.4 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Avexir Technologies Corporation T 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 21
读取速度，GB/s

16.0 18.0
写入速度，GB/s

12.5 13.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

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Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB