Corsair CM3X8GA2400C11Y2R 8GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 26% 更低的延时
更快的读取速度，GB/s

19.1 15

测试中的平均数值
更快的写入速度，GB/s

13.1 10.9

测试中的平均数值

Micron Technology 4ATF51264AZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3E1 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 27
读取速度，GB/s

19.1 15.0
写入速度，GB/s

13.1 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 2288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Crucial Technology BL16G30C15U4B.16FE 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Kingston KHX1600C9S3L/8G 8GB

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Crucial Technology BLS8G4D240FSB.16FBD 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Kingston 99U5584-017.A00LF 4GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4SFS632A.M4FE 8GB

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Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB