Corsair CM3X8GA2400C11Y2R 8GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 38

左右 47% 更低的延时
更快的读取速度，GB/s

19.1 8.7

测试中的平均数值
更快的写入速度，GB/s

13.1 7.0

测试中的平均数值

Micron Technology 72ASS8G72LZ-2G6D2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G6D2 64GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 38
读取速度，GB/s

19.1 8.7
写入速度，GB/s

13.1 7.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 1999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905744-062.A00G 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 36ASF4G72PZ-2G1B1 32GB

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Samsung M378B5673EH1-CF8 2GB

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Panram International Corporation PUD43000C154G4NJW 4GB

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Mushkin 99[2/7/4]200[F/T] 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston KHX2933C15D4/8GX 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Crucial Technology CT8G4SFS632A.M4FE 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB