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Nanya Technology NT1GT64U88D0BY-AD 1GB
G Skill Intl F4-4266C17-16GTZRB 16GB

Nanya Technology NT1GT64U88D0BY-AD 1GB vs G Skill Intl F4-4266C17-16GTZRB 16GB

总分
star star star star star
Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

总分
star star star star star
G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

差异 规格 评论

差异

Nanya Technology NT1GT64U88D0BY-AD 1GB 需要考虑的原因
Nanya Technology NT1GT64U88D0BY-AD 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 22.4
    测试中的平均数值
G Skill Intl F4-4266C17-16GTZRB 16GB 需要考虑的原因
G Skill Intl F4-4266C17-16GTZRB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 68
    左右 -196% 更低的延时
  • 更快的写入速度，GB/s
    20.1 left arrow 2,636.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT1GT64U88D0BY-AD 1GB
G Skill Intl F4-4266C17-16GTZRB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 23
  • 读取速度，GB/s
    4,540.8 left arrow 22.4
  • 写入速度，GB/s
    2,636.8 left arrow 20.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    827 left arrow 4421

Nanya Technology NT1GT64U88D0BY-AD 1GB RAM的比较

SK Hynix HYMP125U72CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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