Corsair CM3X8GA2400C11Y2R 8GB vs Mushkin 99[2/7/4]197F 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Mushkin 99[2/7/4]197F 8GB

Mushkin 99[2/7/4]197F 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 26% 更低的延时
更快的读取速度，GB/s

19.1 12.8

测试中的平均数值
更快的写入速度，GB/s

13.1 11.0

测试中的平均数值

Mushkin 99[2/7/4]197F 8GB

需要考虑的原因
Mushkin 99[2/7/4]197F 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Mushkin 99[2/7/4]197F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 27
读取速度，GB/s

19.1 12.8
写入速度，GB/s

13.1 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3252 2785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Patriot Memory (PDP Systems) 3600 C18 Series 32GB

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Gloway International Co. Ltd. TYP4U3000E16082C 8GB

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AMD AE34G1601U1 4GB

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G Skill Intl F4-2400C16-16GFXR 16GB

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Corsair CMU64GX4M4D3000C16 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 99U5471-012.A00LF 4GB

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A-DATA Technology AO1P26KCST2-BWWS 16GB

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Crucial Technology CT51264BF160B.M16F 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Corsair CMK16GX4M4A2400C16 4GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 9965604-033.D00G 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Zotac Technology Ltd OD48G32S816-ZHC 8GB

Zotac Technology Ltd OD48G32S816-ZHC 8GB