Corsair CM3X8GA2400C11Y2R 8GB vs Teikon TMA851U6CJR6N-VKSC 4GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 62

左右 68% 更低的延时
更快的读取速度，GB/s

19.1 16.1

测试中的平均数值
更快的写入速度，GB/s

13.1 6.0

测试中的平均数值

Teikon TMA851U6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851U6CJR6N-VKSC 4GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Teikon TMA851U6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 62
读取速度，GB/s

19.1 16.1
写入速度，GB/s

13.1 6.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3252 1586

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMT16GX4M2Z3200C16 8GB

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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G Skill Intl F4-3600C18-8GVK 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Gloway International (HK) STK2133C15-8GB 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Samsung M378A1K43BB1-CPB 8GB

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AMD R538G1601U2S 8GB

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Kingston 9965525-140.A00LF 8GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB