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Corsair CMD16GX3M2A1600C7 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Corsair CMD16GX3M2A1600C7 8GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分
star star star star star
Corsair CMD16GX3M2A1600C7 8GB

Corsair CMD16GX3M2A1600C7 8GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异 规格 评论

差异

Corsair CMD16GX3M2A1600C7 8GB 需要考虑的原因
Corsair CMD16GX3M2A1600C7 8GB
报告一个错误
Micron Technology 8ATF1G64AZ-3G2R1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 35
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 9.1
    测试中的平均数值

规格

完整的技术规格清单
Corsair CMD16GX3M2A1600C7 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 31
  • 读取速度，GB/s
    14.1 left arrow 16.9
  • 写入速度，GB/s
    9.1 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow no data
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow , 1.20000005, CAS Supported:
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow no data
  • 排名PassMark (越多越好)
    2471 left arrow 3043

Corsair CMD16GX3M2A1600C7 8GB RAM的比较

Corsair CMZ8GX3M2X1600C7 4GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM的比较

V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905599-026.A00G 8GB
Kingston 9905599-026.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16JTF1G64HZ-1G6E1 8GB
Micron Technology 16JTF1G64HZ-1G6E1 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX2933C17D4/8G 8GB
Kingston KHX2933C17D4/8G 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM