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Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB

Samsung M471B5673FH0-CF8 2GB vs Crucial Technology CT8G4DFS832A.C8FE 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 32
    左右 6% 更低的延时
Crucial Technology CT8G4DFS832A.C8FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFS832A.C8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    21.6 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 32
  • 读取速度，GB/s
    10.6 left arrow 21.6
  • 写入速度，GB/s
    6.8 left arrow 15.5
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3684

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Crucial Technology CT8G4DFS832A.C8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLS8G4D26BFSB.16FE 8GB
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内存RAM
Samsung M471B1G73EB0-YK0 8GB
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内存RAM
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Qimonda 72T128420EFA3SB2 1GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2400C16-8GRS 8GB
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内存RAM