Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 71

左右 58% 更低的延时
更快的读取速度，GB/s

10.6 6.1

测试中的平均数值
更快的写入速度，GB/s

6.8 4.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

报告一个错误

更高的内存带宽，mbps

10600 8500

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 71
读取速度，GB/s

10.6 6.1
写入速度，GB/s

6.8 4.8
内存带宽，mbps

8500 10600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1479 1092

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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