Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

総合得点

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

相違点仕様コメント

相違点

Samsung M471B5673FH0-CF8 2GB

考慮すべき理由
Samsung M471B5673FH0-CF8 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 71

周辺 58% 低遅延
読み出し速度の高速化、GB/s

10.6 6.1

テスト平均値
書き込み速度の高速化、GB/s

6.8 4.8

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

バグを報告する

より高いメモリ帯域幅、mbps

10600 8500

周辺 1.25 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

30 71
読み出し速度、GB/s

10.6 6.1
書き込み速度、GB/秒

6.8 4.8
メモリ帯域幅、mbps

8500 10600

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1066 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

1479 1092

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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