Corsair CMD16GX3M2A1866C9 8GB vs Corsair CMD32GX4M2A2666C15 16GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Corsair CMD32GX4M2A2666C15 16GB

Corsair CMD32GX4M2A2666C15 16GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

Corsair CMD32GX4M2A2666C15 16GB

需要考虑的原因
Corsair CMD32GX4M2A2666C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 -21% 更低的延时
更快的读取速度，GB/s

17.3 16

测试中的平均数值
更快的写入速度，GB/s

13.1 10.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD32GX4M2A2666C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 28
读取速度，GB/s

16.0 17.3
写入速度，GB/s

10.3 13.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 3340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD32GX4M2A2666C15 16GB

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Corsair CMY16GX3M4A2133C8 4GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

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Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Kingston MSI24D4S7D8MB-8 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB