Corsair CMD16GX3M2A1866C9 8GB vs Crucial Technology BL16G32C16S4B.M16FE1 16GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

Crucial Technology BL16G32C16S4B.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 -3% 更低的延时
更快的读取速度，GB/s

16.8 16

测试中的平均数值
更快的写入速度，GB/s

14.4 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 33
读取速度，GB/s

16.0 16.8
写入速度，GB/s

10.3 14.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2782 3262

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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A-DATA Technology DDR4 3600 2OZ 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL8G26C16U4B.8FE 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB