Corsair CMD16GX3M2A1866C9 8GB vs Crucial Technology CT16G4SFD8213.C16FBR 16GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 11% 更低的延时
更快的读取速度，GB/s

16 13.4

测试中的平均数值
更快的写入速度，GB/s

10.3 10.0

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBR 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 38
读取速度，GB/s

16.0 13.4
写入速度，GB/s

10.3 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 2439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905700-013.A00G 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Team Group Inc. DDR4 2800 8GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

G Skill Intl F4-4000C18-8GTZRB 8GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston KHX2400C15D4/8G 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology CT8G4DFD824A.C16FF 8GB

Crucial Technology CT8G4DFD824A.C16FF 8GB