Corsair CMD16GX3M2A1866C9 8GB vs G Skill Intl F4-3200C16-8GTZR 8GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

G Skill Intl F4-3200C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 -21% 更低的延时
更快的读取速度，GB/s

18.2 16

测试中的平均数值
更快的写入速度，GB/s

14.6 10.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 28
读取速度，GB/s

16.0 18.2
写入速度，GB/s

10.3 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 3546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD160B.C16F 4GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston 9905663-021.A00G 16GB

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Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905630-039.A00G 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Kingmax Semiconductor GLNG43F-18---------- 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

Corsair CM4X16GE2400C14K4 16GB

Corsair CM4X16GE2400C14K4 16GB