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Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-4400C19-16GTZR 16GB

Corsair CMD16GX3M2A1866C9 8GB vs G Skill Intl F4-4400C19-16GTZR 16GB

总分
star star star star star
Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分
star star star star star
G Skill Intl F4-4400C19-16GTZR 16GB

G Skill Intl F4-4400C19-16GTZR 16GB

差异 规格 评论

差异

Corsair CMD16GX3M2A1866C9 8GB 需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB
报告一个错误
G Skill Intl F4-4400C19-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4400C19-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    20.2 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-4400C19-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 29
  • 读取速度，GB/s
    16.0 left arrow 20.2
  • 写入速度，GB/s
    10.3 left arrow 16.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2782 left arrow 3925

Corsair CMD16GX3M2A1866C9 8GB RAM的比较

Corsair CMD16GX3M2A1600C9 8GB
Kingston KKN2NM-MIE 4GB

G Skill Intl F4-4400C19-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3200C16-16GTZKW 16GB
G Skill Intl F4-3200C16-16GTZKW 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X16GE2133C13K8 16GB
Corsair CM4X16GE2133C13K8 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3333C16-16GTZ 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
Samsung M4 70T5663EH3-CF7 2GB
Samsung M4 70T5663EH3-CF7 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM