Corsair CMD16GX3M2A1866C9 8GB vs Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 47

左右 28% 更低的延时
更快的读取速度，GB/s

16 14.8

测试中的平均数值

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

报告一个错误

更快的写入速度，GB/s

11.6 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 47
读取速度，GB/s

16.0 14.8
写入速度，GB/s

10.3 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2782 2875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

Samsung M391B1G73BH0-CK0 8GB

Samsung M391B1G73BH0-CK0 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Kingston 9905428-093.A00LF 8GB

Kingston 9905428-093.A00LF 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB