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PNY Electronics PNY 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
比较
PNY Electronics PNY 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
总分
PNY Electronics PNY 2GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
27
左右 -50% 更低的延时
更快的读取速度,GB/s
20.5
13.8
测试中的平均数值
更快的写入速度,GB/s
16.2
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
18
读取速度,GB/s
13.8
20.5
写入速度,GB/s
8.4
16.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2274
3564
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Team-Elite-1333 4GB
Corsair CMD16GX4M4B2133C10 4GB
Qimonda 72T128420EFA3SB2 1GB
Kingston 99U5734-014.A00G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston KHX2133C14D4/4G 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology DDR4 3200 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905734-003.A00G 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
报告一个错误
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Bug description
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