Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston XG9XKG-MIE 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 55

左右 24% 更低的延时

Kingston XG9XKG-MIE 16GB

需要考虑的原因
Kingston XG9XKG-MIE 16GB

报告一个错误

更快的读取速度，GB/s

17.2 9.7

测试中的平均数值
更快的写入速度，GB/s

14.3 6.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston XG9XKG-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 55
读取速度，GB/s

9.7 17.2
写入速度，GB/s

6.0 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1396 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5673FH0-CF8 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston HP32D4S2S1ME-8 8GB

Corsair CMZ32GX3M4A1866C9 8GB

Corsair CMZ32GX3M4A1866C9 8GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avant Technology W642GU42J5213N8 16GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB