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Corsair CMD16GX3M4A2666C11 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
比较
Corsair CMD16GX3M4A2666C11 4GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
总分
Corsair CMD16GX3M4A2666C11 4GB
总分
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMD16GX3M4A2666C11 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
74
左右 66% 更低的延时
更快的读取速度,GB/s
18.6
13.6
测试中的平均数值
更快的写入速度,GB/s
12.9
7.7
测试中的平均数值
需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
报告一个错误
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CMD16GX3M4A2666C11 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
74
读取速度,GB/s
18.6
13.6
写入速度,GB/s
12.9
7.7
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3236
1616
Corsair CMD16GX3M4A2666C11 4GB RAM的比较
Mushkin 99[2/7/4]164(S/Y) 4GB
Avant Technology W6451U67J5213NB 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-4000C16-16GVK 16GB
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Crucial Technology CT8G4SFD8213.C16FBR2 8GB
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Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
报告一个错误
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Bug description
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