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Corsair CMD8GX3M2A2800C12 4GB
Shenzhen Xingmem Technology Corp 16GB

Corsair CMD8GX3M2A2800C12 4GB vs Shenzhen Xingmem Technology Corp 16GB

总分
star star star star star
Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

总分
star star star star star
Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2800C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2800C12 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 43
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.8
    测试中的平均数值
Shenzhen Xingmem Technology Corp 16GB 需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2800C12 4GB
Shenzhen Xingmem Technology Corp 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 43
  • 读取速度，GB/s
    17.3 left arrow 14.3
  • 写入速度，GB/s
    12.0 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2568 left arrow 2128

Corsair CMD8GX3M2A2800C12 4GB RAM的比较

Mushkin 992038 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB

Shenzhen Xingmem Technology Corp 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMD8GX3M2A2800C12 4GB
Corsair CMD8GX3M2A2800C12 4GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
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Samsung M393A1G43DB1-CRC 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
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Corsair CMD16GX4M4A2666C15 4GB
内存RAM
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Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Apacer Technology 78.D2GFH.4030B 16GB
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SK Hynix HMT351U6CFR8C-H9 4GB
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Samsung M471B5273CH0-CH9 4GB
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Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3200C16-8GIS 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
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Apacer Technology 78.01GA0.9K5 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
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