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Kingston 9905403-156.A00LF 2GB
Shenzhen Xingmem Technology Corp 16GB
比较
Kingston 9905403-156.A00LF 2GB vs Shenzhen Xingmem Technology Corp 16GB
总分
Kingston 9905403-156.A00LF 2GB
总分
Shenzhen Xingmem Technology Corp 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
18
43
左右 58% 更低的延时
更快的读取速度,GB/s
17.7
14.3
测试中的平均数值
更快的写入速度,GB/s
13.1
7.8
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Shenzhen Xingmem Technology Corp 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
18
43
读取速度,GB/s
17.7
14.3
写入速度,GB/s
13.1
7.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2926
2128
Kingston 9905403-156.A00LF 2GB RAM的比较
Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB
Shenzhen Xingmem Technology Corp 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-174.A00LF 2GB
Samsung M471A5143SB1-CRC 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-8GVR 8GB
Kingston 9905403-444.A00LF 4GB
Kingston HP26D4S9D8MJ-16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology GD2.1527WT.001 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-4GRB 4GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology 8G4US2400.M8B1 8GB
报告一个错误
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Bug description
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