Corsair CMD8GX3M2A3000C12 4GB vs Corsair CMG32GX4M2D3600C18 16GB

总分

Corsair CMD8GX3M2A3000C12 4GB

Corsair CMD8GX3M2A3000C12 4GB

总分

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

差异规格评论

差异

Corsair CMD8GX3M2A3000C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A3000C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Corsair CMG32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMG32GX4M2D3600C18 16GB

报告一个错误

更快的读取速度，GB/s

17.8 14.9

测试中的平均数值
更快的写入速度，GB/s

14.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A3000C12 4GB

Corsair CMG32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

14.9 17.8
写入速度，GB/s

8.1 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2482 3573

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Samsung M393A5143DB0-CPB 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA82GU7MFR8N-TF 16GB

SK Hynix HMA82GU7MFR8N-TF 16GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB