Corsair CML16GX3M2A1600C10 8GB vs Crucial Technology BL16G26C16U4B.16FE 16GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

Crucial Technology BL16G26C16U4B.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4B.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

15.8 13.9

测试中的平均数值
更快的写入速度，GB/s

14.3 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology BL16G26C16U4B.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

13.9 15.8
写入速度，GB/s

8.5 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2385 3373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB