Samsung M378B5773CH0-CH9 2GB vs Eudar Technology Inc. 8GXMP2666CL16 8GB

总分

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

差异规格评论

差异

Samsung M378B5773CH0-CH9 2GB

需要考虑的原因
Samsung M378B5773CH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 64

左右 39% 更低的延时

Eudar Technology Inc. 8GXMP2666CL16 8GB

需要考虑的原因
Eudar Technology Inc. 8GXMP2666CL16 8GB

报告一个错误

更快的读取速度，GB/s

16.5 12.8

测试中的平均数值
更快的写入速度，GB/s

8.1 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773CH0-CH9 2GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 64
读取速度，GB/s

12.8 16.5
写入速度，GB/s

7.4 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1770 2016

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Kingston K531R8-MIN 4GB

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Apacer Technology D12.2324WT.001 8GB

Apacer Technology D12.2324WT.001 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB