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Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-16GTZ 16GB

Corsair CML16GX3M2A1600C10 8GB vs G Skill Intl F4-3000C14-16GTZ 16GB

总分
star star star star star
Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分
star star star star star
G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

差异 规格 评论

差异

Corsair CML16GX3M2A1600C10 8GB 需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB
报告一个错误
G Skill Intl F4-3000C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 31
  • 读取速度，GB/s
    13.9 left arrow 17.5
  • 写入速度，GB/s
    8.5 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2385 left arrow 3371

Corsair CML16GX3M2A1600C10 8GB RAM的比较

Corsair CMZ16GX3M2A1600C9 8GB
Corsair CM4X8GE2666C16K8 8GB

G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905700-025.A00G 8GB
Kingston 9905700-025.A00G 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Chun Well Technology Holding Limited D4U0836144B 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
Team Group Inc. TEAMGROUP-UD4-2800 8GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Golden Empire CL34-38-38 D5-5200 16GB
Golden Empire CL34-38-38 D5-5200 16GB
内存RAM