Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3000C14-16GTZ 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.5

测试中的平均数值

G Skill Intl F4-3000C14-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

13.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3000C14-16GTZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 17.5
写入速度，GB/s

1,519.2 13.6
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMK32GX4M4A2133C15 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston KTD3KX-MIB 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Crucial Technology BLS8G4S240FSDK.8FBD 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB