Corsair CML16GX3M2A1600C10 8GB vs G Skill Intl F4-3600C16-16GTZRC 16GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

G Skill Intl F4-3600C16-16GTZRC 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTZRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

19.3 13.9

测试中的平均数值
更快的写入速度，GB/s

16.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3600C16-16GTZRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.9 19.3
写入速度，GB/s

8.5 16.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2385 3889

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Samsung 1600 CL10 Series 8GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston HP26D4S9S1ME-4 4GB