Corsair CML16GX3M2A1600C10 8GB vs G Skill Intl F4-3733C17-8GTZKK 8GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

G Skill Intl F4-3733C17-8GTZKK 8GB

需要考虑的原因
G Skill Intl F4-3733C17-8GTZKK 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

23.1 13.9

测试中的平均数值
更快的写入速度，GB/s

19.4 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

13.9 23.1
写入速度，GB/s

8.5 19.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2385 4380

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-5600J4040C16G 16GB

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Samsung M393B5170FH0-CH9 4GB

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Kingston XVTW4H-MIE 32GB

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A-DATA Technology DDR2 800G 2GB

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A-DATA Technology DDR4 4133 8GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMK32GX4M1A2666C16 32GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB