Corsair CML16GX3M2A1600C10 8GB vs Kingston X74R9W-MIE 8GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

Kingston X74R9W-MIE 8GB

需要考虑的原因
Kingston X74R9W-MIE 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 41

左右 -78% 更低的延时
更快的读取速度，GB/s

18.5 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Kingston X74R9W-MIE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 23
读取速度，GB/s

13.9 18.5
写入速度，GB/s

8.5 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2385 3136

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Mushkin 99[2/7/4]198F 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston KF3600C16D4/8GX 8GB

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Kingston KF3600C16D4/16GX 16GB

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Samsung M471B5173DB0-YK0 4GB

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A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

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Kingston 9965516-430.A00G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KHX2400C15D4/8G 8GB

Kingston KHX2400C15D4/8G 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

SK Hynix HMAA4GU6AJR8N-VK 32GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston 9905678-012.A00G 8GB

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Crucial Technology CT51264BC160B.M16F 4GB

Crucial Technology CT51264BC160B.M16F 4GB

Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB