Corsair CML16GX3M2A1600C10 8GB vs Patriot Memory (PDP Systems) PSD416G21332 16GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

Patriot Memory (PDP Systems) PSD416G21332 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

15.9 13.9

测试中的平均数值
更快的写入速度，GB/s

10.9 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

13.9 15.9
写入速度，GB/s

8.5 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2385 3105

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Kingston 9905783-025.A01G 16GB

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Kingston 99U5469-045.A00LF 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Team Group Inc. Team-Elite-1333 4GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

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G Skill Intl F4-3200C14-8GTZKO 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16G

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G Skill Intl F3-10600CL9-2GBNT 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB