Corsair CML16GX3M2A1600C10 8GB vs Teikon TMA851U6AFR6N-UHHC 4GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

更快的读取速度，GB/s

13.9 11.9

测试中的平均数值

Teikon TMA851U6AFR6N-UHHC 4GB

需要考虑的原因
Teikon TMA851U6AFR6N-UHHC 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的写入速度，GB/s

8.7 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Teikon TMA851U6AFR6N-UHHC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

13.9 11.9
写入速度，GB/s

8.5 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2385 1875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A1G40DB0-B`B 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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G Skill Intl F4-3000C16-8GSXKB 8GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

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Micron Technology 18ASF1G72AZ-2G1A1 8GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M471A1K43DB1-CWE 8GB

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Kingston KHX1600C9S3L/8G 8GB

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V-Color Technology Inc. TC416G24D817 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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