Corsair CML16GX3M2A1600C10 8GB vs Transcend Information TS512MSH64V4H 4GB

总分

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

总分

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异规格评论

差异

Corsair CML16GX3M2A1600C10 8GB

需要考虑的原因
Corsair CML16GX3M2A1600C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 45

左右 9% 更低的延时
更快的读取速度，GB/s

13.9 5.3

测试中的平均数值
更快的写入速度，GB/s

8.5 8.4

测试中的平均数值

Transcend Information TS512MSH64V4H 4GB

需要考虑的原因
Transcend Information TS512MSH64V4H 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CML16GX3M2A1600C10 8GB

Transcend Information TS512MSH64V4H 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 45
读取速度，GB/s

13.9 5.3
写入速度，GB/s

8.5 8.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2385 1535

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43DB1-CTD 8GB

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Crucial Technology CT102464BA160B.M16 8GB

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Kingston KHX1600C9S3L/4G 4GB

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G Skill Intl F4-2400C17-8GSXW 8GB

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Crucial Technology CT16G4SFD8266 16GB

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Crucial Technology BLS8G4D26BFSTK.8FD 8GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Essencore Limited IM48GU88A30-FGGHMB 8GB

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Essencore Limited KD48GU880-32A160U 8GB

Essencore Limited KD48GU880-32A160U 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

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A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB