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Corsair CML8GX3M2A1600C9 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
比较
Corsair CML8GX3M2A1600C9 4GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB
总分
Corsair CML8GX3M2A1600C9 4GB
总分
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
39
左右 -22% 更低的延时
更快的读取速度,GB/s
16.8
14.6
测试中的平均数值
更快的写入速度,GB/s
15.4
8.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
32
读取速度,GB/s
14.6
16.8
写入速度,GB/s
8.8
15.4
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2355
3579
Corsair CML8GX3M2A1600C9 4GB RAM的比较
G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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TwinMOS 8DPT5MK8-TATP 2GB
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Kingston 9905402-665.A00LF 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2400C16-8GIS 8GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Avant Technology F6451U64F9333G 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
报告一个错误
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Bug description
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